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英飛凌推出超高功率密度設計的全新E型XDP™混合反激控制器IC Infineon Technologies Launches New E-Type XDP™ Hybrid Flyback Controller IC Designed for Ultra-High Power Density

【 2025 年 3 月 26 日 , 德國慕尼黑訊】繼推出業界首款PFC和混合反激（HFB）組合IC後，全球功率系統和物聯網領域的半導體領導者英飛凌科技股份公司（FSE代碼：IFX / OTCQX代碼：IFNNY）又推出E型混合反激控制器系列。專為高效能應用設計的全新XDP™混合反激數位控制器系列，採用先進的不對稱半橋（AHB）拓撲結構，將反激轉換器的簡易性和諧振轉換器的效率相結合，從而實現高功率密度設計。因此，此控制器系列適用於各類AC/DC應用，包括二級市場及原廠充電器、轉接器、電動工具、電動自行車充電器、工業開關電源、電視機電源、LED驅動器等。

與主動箝位反激（ACF）和LLC 諧振轉換器相比，混合反激拓樸結構具有許多優勢。它減少了磁能存儲，並以較低的漏感運行，從而實現更小尺寸的變壓器設計。混合反激（HFB）在廣泛的輸出電壓範圍內實現了高效率，並透過多模式運行減少了功率損耗，不僅降低了待機功耗，還提升了低負載條件下的效率，以符合《能效一致性證書》（CoC） 2 級和美國能源部（DoE）7級標準。這些特性使HFB非常適合設計緊湊、高效的電源。透過正在申請專利的PFC特性改進技術、同步PFC和HFB啟動操作，以及面向最新CoolGaN™電晶體的最佳化措施，E型混合反激IC進一步提高了功率轉換應用的性能。此外，簡化的參數配置，配合全面的設計工具和設計指南，為高效地實現先進設計提供了有力支援。

該技術的相關資訊已在美國亞特蘭大APEC 2025大會（3月16日-20日）英飛凌展台上公佈。展品包括超緊湊型140 W GaN充電器、具有出色待機表現和部分負載效率的120 W多埠充電器解決方案，以及DC-DC電壓轉換效率達到97%以上的超薄400 W電源裝置。

[Munich, Germany, March 26, 2025] Following the launch of the industry's first PFC and hybrid flyback (HFB) combination IC, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), ​​a global semiconductor leader in power systems and the Internet of Things, has launched the E-type hybrid flyback controller series. Designed for high-performance applications, the new XDP™ hybrid flyback digital controller series uses an advanced asymmetric half-bridge (AHB) topology to combine the simplicity of a flyback converter with the efficiency of a resonant converter to achieve high power density design. As a result, this controller series is suitable for a wide range of AC/DC applications, including aftermarket and original chargers, adapters, power tools, e-bike chargers, industrial switching power supplies, TV power supplies, LED drivers, etc.

The hybrid flyback topology has many advantages over active clamp flyback (ACF) and LLC resonant converters. It reduces magnetic energy storage and operates with lower leakage inductance, enabling smaller transformer designs. Hybrid Flyback (HFB) achieves high efficiency over a wide output voltage range and reduces power losses through multi-mode operation, which not only reduces standby power consumption but also improves efficiency under low-load conditions to meet Certificate of Conformance (CoC) Level 2 and US Department of Energy (DoE) Level 7 standards. These features make HFB ideal for designing compact and efficient power supplies. Through patent-pending PFC characteristic improvement technology, synchronous PFC and HFB startup operation, and optimization measures for the latest CoolGaN™ transistors, the E-type hybrid flyback IC further improves the performance of power conversion applications. In addition, simplified parameter configuration, combined with comprehensive design tools and design guidelines, provides strong support for the efficient implementation of advanced designs.

Information about the technology was announced at the Infineon booth at the APEC 2025 Conference in Atlanta, USA (March 16-20). Exhibits include an ultra-compact 140 W GaN charger, a 120 W multi-port charger solution with excellent standby performance and partial load efficiency, and an ultra-thin 400 W power supply unit with DC-DC voltage conversion efficiency of more than 97%.